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2SC5548
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5548
High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
* * * High speed switching: tr = 0.5 s (max), tf = 0.3 s (max) (IC = 0.8 A) High collector breakdown voltage: VCEO = 370 V High DC current gain: hFE = 60 (min) (IC = 0.2 A) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25C Tc = 25C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 370 7 2 4 0.5 1.0 15 150 -55 to 150 Unit V V V A A
JEDEC
W C C
2-7B1A
JEITA TOSHIBA
Weight: 0.36 g (typ.)
JEDEC JEITA TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
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2SC5548
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr IB1 Test Condition VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.2 A IC = 0.8 A, IB = 0.1 A IC = 0.8 A, IB = 0.1 A 20 s VCC 200 V IB1 IB21 IC 250 Min 600 370 50 60 Typ. Max 20 10 120 120 1.0 1.3 V V Unit A A V V
Rise time
0.5
Switching time
Storage time
tstg
IB2 INPUT
OUTPUT
3.0
s
Fall time
tf
IB1 = 0.1 A, IB2 = -0.2 A DUTY CYCLE 1%
0.3
Marking
C5548
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SC5548
IC - VCE
2.0 200 1.6 150 100 300 1000
hFE - IC
Collector current IC (A)
hFE
80 1.2 60 40 0.8 20 IB = 10 mA 0.4 Common emitter Tc = 25C 0 0 2 4 6 8 10
100
Tc = 100C 25
DC current gain
30
-55
10
3 1 0.001
Common emitter VCE = 5 V 0.003 0.01 0.03 0.1 0.3 1 3
Collector-emitter voltage
VCE
(V)
Collector current IC (A)
VCE (sat) - IC
10 Common emitter 10
VBE (sat) - IC
Common emitter
Collector-emitter saturation voltage VCE (sat) (V)
3
IC/IB = 8
Base-emitter saturation voltage VBE (sat) (V)
IC/IB = 8 3
1
Tc = 100C
1
25
-55
0.3
25 -55
Tc = 100C 0.3
0.1
0.03 0.01
0.03
0.1
0.3
1
3
10
0.1 0.01
0.03
0.1
0.3
1
3
Collector current IC (A)
Collector current IC (A)
IC - VBE
2.0 Common emitter VCE = 5 V 20
PC - Ta
PC (W)
(1) Tc = Ta infinite heat sink (2) No heat sink (1)
IC (A)
1.6
16
1.2
Collector power dissipation
12
Collector current
0.8
8
0.4 Tc = 100C 0 0 25 -55
4 (2) 0 0 25 50 75 100 125 150 175 200
0.4
0.8
1.2
1.6
Base-emitter voltage
VBE
(V)
Ambient temperature
Ta
(C)
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2SC5548
rth - tw
(C/W)
300 (2) 100 50 30 (1)
Transient thermal resistance
rth
10 5 3
Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 0.01 0.1 1 10 100 1000
1 0.5 0.001
Pulse width
tw
(s)
Safe Operating Area
10 5 IC max (pulsed)* 100 s* 3 10 s* 1 ms* 5
Switching Characteristics - IC
IC = 8IB1 2IB1 = -IB2 VCC 200 V Pulse width = 20s Duty cycle 1 Tc = 25C
3 IC max (continuous) 1
tstg
(s)
Collector current IC (A)
0.5 0.3
DC operation Tc = 25C 10 ms*
Switching time
1
0.5 0.3
0.1 0.05 0.03
100 ms*
tf 0.1 0.1 0.3 0.5 1 3 5 10
0.01 0.005 *: Single nonrepetitive pulse Tc = 25C 0.003 Curves must be derated linearly with increase in temperature. 0.001 1 3 10 30
Collector current IC (A)
VCEO max
100
300
1000
Collector-emitter voltage
VCE
(V)
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2SC5548
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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